sep. 2000 CT60AM-18B v ces ............................................................................... 900v i c ......................................................................................... 60a integrated fast recovery diode v ge = 0v v ce = 0v v ce = 0v t c = 25 c 900 20 30 60 120 40 200 C40 ~ +150 C40 ~ +150 v v v a a a w c c v ces v ges v gem i c i cm i e p c t j t stg outline drawing dimensions in mm mitsubishi insulated gate bipolar transistor CT60AM-18B resonant inverter use application microwave ovens, electromagnetic cooking devices, rice-cookers to-3pl conditions symbol collector-emitter voltage gate-emitter voltage peak gate-emitter voltage collector current collector current (pulsed) emitter current maximum power dissipation junction temperature storage temperature maximum ratings (tc = 25 c) parameter ratings unit 4 wr q e q w e r f 3.2
sep. 2000 i c = 1ma, v ge = 0v v ce = 900v, v ge = 0v v ge = 20v, v ce = 0v v ce = 10v, i c = 6ma i c = 60a, v ce = 15v v ce = 25v, v ge = 0v, f = 1mhz i c = 60a, resistance load, v cc = 300v, v ge = 15v, r g = 10 w i cp = 60a, t j = 125 c, dv/dt = 200v/ m s i e = 60a, v ge = 0v i e = 60a, di/dt = 20a/ m s junction to case junction to case v ma m a v v pf pf pf m s m s m s m s mj/pls a v m s c/w c/w 4.0 2.0 5000 125 85 0.05 0.12 0.30 0.25 0.6 6 0.5 1 0.5 6.0 2.7 1.0 12 3 2 0.63 4.0 v (br) ces i ces i ges v ge(th) v ce(sat) c ies c oes c res t d (on) t r t d (off) t f e tail i ctail v ec t rr r th (j-c) r th (j-c) mitsubishi insulated gate bipolar transistor CT60AM-18B resonant inverter use 900 2.0 0 1 2 3 4 5 0 4 8 12 16 20 i c = 120a 60a 15a 30a t c = 25? pulse test 0 40 80 120 160 200 012345 t c = 25? pulse test v ge = 20v p c = 200w 15v 10v 8v 9v 7v output characteristics (typical) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage vs.gate-emitter voltage (typical) gate-emitter voltage v ge (v) collector-emitter saturation voltage v ce(sat) (v) electrical characteristics (tj = 25 c unless otherwise noted) symbol unit parameter test conditions limits min. typ. max. collector-emitter breakdown voltage collector-emitter leakage current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time tail loss collector tail current emitter-collector voltage reverse recovery time thermal resistance (igbt part) thermal resistance performance curves
sep. 2000 mitsubishi insulated gate bipolar transistor CT60AM-18B resonant inverter use 10 0 10 1 23 57 10 2 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t d(off) t d(on) t f t r t j = 25? v cc = 300v v ge = 15v r g = 10 w 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 0 357 2 10 1 357 2 10 2 357 3 2 t j = 25? v ge = 0v f = 1mh z cies coes cres 10 0 10 1 23 57 10 2 23 57 10 2 3 5 7 10 3 2 3 5 7 2 3 t d(off) t d(on) t f t r t j = 25? v cc = 300v v ge = 15v i c = 60a 0 4 8 12 16 20 0 80 160 240 320 400 v ce = 250v 400v 600v i c = 60a t j = 25? 0 40 80 120 160 200 0 4 8 12 16 20 v ce = 5v pulse test 25? 0 16 32 48 64 80 0 0.8 1.6 2.4 3.2 4.0 v ge = 0v pulse test t c = 25? collector current vs. gate-emitter voltage (typical) gate-emitter voltage v ge (v) collector current i c (a) switching time vs.gate resistance (typical) gate resistance r g ( w ) switching time (ns) switching characteristics (typical) collector current i c (a) switching time (ns) capacitance vs. collector-emitter voltage (typical) collector-emitter voltage v ce (v) capacitance cies, coes, cres (pf) emitter-collector voltage v ec (v) transfer characteristics (typical) emitter current i e (a) gate charge q g (nc) gate-emitter voltage vs. gate charge characteristic (typical) gate-emitter voltage v ge (v)
sep. 2000 mitsubishi insulated gate bipolar transistor CT60AM-18B resonant inverter use 2.0 3.0 4.0 5.0 6.0 7.0 ?0 0 50 100 150 v ce = 400v i c = 20ma 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v ge = 0v i c = 1ma 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 0 23 57 23 57 10 ? 23 57 10 ? 10 ? 10 0 23 57 10 1 10 ? 7 5 3 2 10 ? 2 23 57 10 ? 23 57 10 ? 57 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 0 7 5 3 2 10 1 23 57 23 57 10 ? 23 57 10 ? 10 ? 10 0 23 57 10 1 10 ? 7 5 3 2 10 ? 3 2 5 23 57 10 ? 23 57 10 ? 57 threshold voltage vs. junction temperature (typical) gate-emitter threshold voltage v gs (th) (v) junction temperature t j (?) channel temperature t j (?) breakdown voltage vs. junction temperature (typical) collector-emitter breakdown voltage v (br) ces (t?) collector-emitter breakdown voltage v (br) ces (25?) igbt transient thermal impedance characteristics pulse width t w (s) transient thermal impedance z th (j?) (?/ w) diode transient thermal impedance characteristics pulse width t w (s) transient thermal impedance z th (j?) (?/ w)
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